R&D Power Semiconductor Chip Engineer

Hitachi Energy AG - June 22, 2026

The Opportunity

In our R&D BiMOS semiconductor chip groups at Hitachi Energy Semiconductors, we are developing advanced power semiconductor devices across multiple voltage classes. Our high-quality products are manufactured at both internal and external production sites, providing solutions for customers worldwide in a variety of applications, including industrial, renewable energy, traction, and e-mobility.

We are currently seeking a motivated R&D Semiconductor Chip Specialist to contribute to the development of next-generation power semiconductor technologies. In this role, you will focus on silicon-based devices (with a strong emphasis on power diodes) while also expanding into broader device concepts such as IGBTs and MOSFETs.

This position is ideal for candidates with a solid technical foundation in semiconductor device physics and simulation, who are eager to enhance their expertise within a collaborative, high-tech R&D environment.

How You’ll Make an Impact

  • Contribute to the development of next-generation power semiconductor chips, with a strong focus on silicon power diodes and related device technologies.
  • Support the end-to-end technology and product development cycle, from concept and simulation to validation and reliability assessment.
  • Apply and further develop TCAD simulation models to understand device behavior and optimize performance, yield, and cost.
  • Collaborate closely with process engineers, characterization, and reliability teams, ensuring alignment between design and manufacturability.
  • Take ownership of individual work packages or sub-projects, contributing to overall project goals and timelines.
  • Drive continuous improvement through data-driven analysis, modeling, and optimization approaches.
  • Actively contribute to knowledge sharing within the team while building a strong systems-level understanding of semiconductor devices and processes.

Your Background

  • Master’s or PhD in Physics, Electrical Engineering, or a related field, with a focus on semiconductor device physics.
  • Proven experience in power semiconductor device development, ideally with exposure to silicon power diodes.
  • Strong hands-on experience with TCAD simulation tools (e.g., Sentaurus, COMSOL).
  • Good understanding of semiconductor device physics, characteristics, and technology development processes.
  • Exposure to cross-functional collaboration with process, characterization, and reliability teams.
  • Initial experience in owning technical tasks or supervising junior profiles is a plus.
  • Familiarity with process integration aspects or modeling approaches is considered an advantage.
  • Self-driven, analytical, and eager to learn and grow in a high-performance R&D environment.
  • Proficiency in English with strong communication and presentation skills.

Apply online using the form below. Please note that only applications matching the job profile will be considered.

Qualified individuals with a disability may request a reasonable accommodation if you are unable or limited in your ability to use or access the Hitachi Energy career site due to your disability.

Location : Lenzburg
Country : Switzerland

Application Form

Please enter your information in the following form and attach your resume (CV)

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